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Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

By Frigeri C, Bietti S, Somaschini C, Koguchi N and Sanguinetti S

Abstract

<p>Abstract</p> <p>We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10<sup>7</sup> to 10<sup>9</sup> cm<sup>&#8722;2</sup>. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III&#8211;V quantum nanostructures directly on silicon substrate.</p

Topics: Nanotechnology, Molecular beam epitaxy, Droplet epitaxy, Integration of III&#8211;V on Si, Local artificial substrate, Chemistry, QD1-999, Science, Q, DOAJ:Chemistry (General), DOAJ:Chemistry, Materials of engineering and construction. Mechanics of materials, TA401-492
Publisher: Springer
Year: 2010
DOI identifier: 10.1007/s11671-010-9760-5
OAI identifier: oai:doaj.org/article:2adb575da0ef4d00826677a277e7485e
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  • http://dx.doi.org/10.1007/s116... (external link)
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