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Spin injection into silicon

By Igor Zutic, Jaroslav Fabian and Steven C. Erwin

Abstract

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques

Topics: 530 Physik, ddc:530
Publisher: 'American Physical Society (APS)'
Year: 2006
DOI identifier: 10.1103/PhysRevLett.97.026602
OAI identifier: oai:epub.uni-regensburg.de:1819

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