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Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices

By S Ahmed, K Amirov, U Larsson, P Too, B J Sealy and R Gwilliam


<p>In this paper we present the results of two new experiments (1) Infrared Reflectivity (IR) measurements of the thickness of the modified layers following the proton implantation in n-type GaAs layers at various implant temperatures and (2) a detailed study of the thermal stability of n-type GaAs layers isolated by proton implantation. It is found that the threshold dose (minimum implant dose required for a maximum sheet resistivity) for a device is a key parameter to obtain good thermal stability. The optical properties also depend on the implantation temperature and dose.</p

Year: 2003
DOI identifier: 10.1109/EDMO.2003.1260051
OAI identifier:

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