Correlation Between Breakdown and Process-Induced Positive Charge Trapping in Thin Thermal Si02

Abstract

growth (2.80 ~m, 467 ~/min). Note the trenches formed by the conver-gence of encroaching walls and the trenches that formed in the middle of these 10 ~m patterns. mospher ic pressure pitaxial processes, they are not an improvement over those for commercia l reduced pres-sure processes (8). In fact, for temperatures below 800~ the distortion appears to be worse than that observed at higher temperatures in reduced pressure reactors (8), which is consistent with the distort ion behavior as a funct ion of temperature observed in this work. The ap-parent lack of pattern shift observed in this work is an improvement over both atmospheric and reduced pres-sure commercial epitaxial processes