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Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors

By Jerry Yu, Samuel Ippolito, Mahnaz Shafiei, Deepak Dhawan, Wojtek Wlodarski and Kourosh Kalantar-zadeh

Abstract

Pt/nanostructured molybdenum oxide (MoO3) /SiC Schottky diode based gas sensors were fabricated for hydrogen (H2) gas sensing. Due to the enhanced performance, which is ascribed to the application of MoO3 nanostructures, these devices were used in reversed bias. MoO3 characterization by scanning electron microscopy showed morphology of randomly orientated nanoplatelets with thicknesses between 50 and 500 nm. An α-Β mixed phase crystallographic structure of MoO3 was characterized by x-ray diffraction. At 180 °C, 1.343 V voltage shift in the reverse I-V curve and a Pt/ MoO3 barrier height change of 20 meV were obtained after exposure to 1% H2 gas in synthetic air. © 2009 American Institute of Physics

Topics: 010000 MATHEMATICAL SCIENCES, 020000 PHYSICAL SCIENCES, 090000 ENGINEERING
Publisher: American Institute of Physics
Year: 2009
DOI identifier: 10.1063/1.3054164
OAI identifier: oai:eprints.qut.edu.au:44233
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