Interface-selective probing of magnetism is a key issue for the design and realization of spin-electronic junction devices. Here, magnetization-induced second-harmonic generation was used to probe the local magnetic properties at the interface of the perovskite ferromagnet La0.6Sr0.4MnO3 with nonmag-netic insulating layers, as used in spin-tunnel junctions. We show that by grading the doping profile on an atomic scale at the interface, robust ferro-magnetism can be realized around room temperature. The results should lead to improvements in the performance of spin-tunnel junctions. In the development of semiconductor technol-ogy, a major role was played by the elucidation of electronic states at heterointerfaces such as positive-negative (p-n) junctions and metal/ semiconductor interfaces. In the p-n junction, for example, a depletion layer and built-in elec-tric field are formed at the interface so as t
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