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Thermal Expansion Coefficients of 6H Silicon Carbide

By M. Stockmeiera, S. A. Sakwe, P. Hens, P. J. Wellmann, R. Hock and A. Magerl

Abstract

Abstract. The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice parameter measurements at temperatures from 300 K to 1575 K. All samples have a volume of at least 6 x 6 x 6 mm3 to ensure that bulk properties are measured. The measurements were performed with a triple axis diffractometer with high energy x-rays with a photon energy of 60 keV. The values for the thermal expansion coefficients along the a- and c-direction, α11 and α33, are in the range of 3·10-6 K-1 for 300 K and 6·10-6 K-1 for 1550 K. At high temperatures the coefficients for aluminum doped samples are approximately 0.5·10-6 K-1 lower than for the nitrogen doped crystal. α11 and α33 appear to be isotropic

Topics: thermal expansion, high energy x-ray diffraction, bulk characterization
Year: 2016
OAI identifier: oai:CiteSeerX.psu:10.1.1.930.5456
Provided by: CiteSeerX
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