Photoelectrochemical e ls based on layer-type semiconductors (i.e., tran-sition metal sulfides and selenides) have gained substantial interest due to their reasonably high solar efficiency and good stabil ity against photocorrosion. However, the performance of this type of cell may be limited by irregularities in the semiconductor, since edges of the van der Waals surface exposed to the electrolyte may act as recombination centers. To control this effect, chemical surface treatments, based on specific agents which perform selectively on the transition metal atoms at the edge sites, have been studied. In particular, the effect of the disodium salt of the ethylene diamine tetracetic acid (EDTA) molecule (as well as that of many other organic molecules) on the perform-ance of an n-MoSe2/I-, I2/Pt sample cell has been investigated. The treat-ment with EDTA generally improved both short-circuit current and power output, even if a considerable variation in the response from crystal to crystal was observed. The stability of the EDTA effect under prolonged cell operatio
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