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Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Abstract

The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux

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20080039432oai:casi.ntrs.nasa.gov:20080039432
Last time updated on May 31, 2013View original full text link

This paper was published in NASA Technical Reports Server.

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