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Temperature and doping dependence of spin relaxation in n-InAs

By B. N. Murdin, K. Litvinenko, J. Allam, C. R. Pidgeon, M. Bird, K. Morrison, T. Zhang, S. K. Clowes, W. R. Branford, J. Harris and L. F. Cohen

Abstract

<p>We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in the narrow gap semiconductor material <i>n</i>-InAs as a function of temperature, doping, and pump wavelength. The results are consistent with the D'Yakonov-Perel mechanism for temperatures between 77 and 300 K. However, the data suggest that electron-electron scattering should be taken into account in determining the dependence of the spin lifetime on the carrier concentration in the range 5.2×10<sup>16–</sup>8.8×10<sup>17</sup> cm<sup>–3</sup>. For a sample with doping of 1.22×10<sup>17</sup> cm<sup>–3</sup> the spin lifetime was 24 ps at room temperature. By applying a magnetic field in the sample plane we also observed coherent precession of the spins in the time domain, with a <i>g>/i> factor <i>g</i><sup>*</sup>=–13, also at room temperature.</p

Year: 2005
DOI identifier: 10.1103/PhysRevB.72.085346
OAI identifier: oai:epubs.surrey.ac.uk:1786

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