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Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

By S. R. Jin, S. J. Sweeney, C. N. Ahmad, A. R. Adams and B. N. Murdin

Abstract

<p>We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured at low temperatures ~100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ~100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we observed a reduction of the threshold current with increasing pressure. Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from ~100 to 300 K</p

Year: 2004
DOI identifier: 10.1063/1.1772871
OAI identifier: oai:epubs.surrey.ac.uk:1772

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