Location of Repository

A P-well GaAs MESFET technology

By 

Abstract

Graduation date: 1991The semiconductor gallium arsenide (GaAs) has many potential\ud advantages over the more widely used semiconductor silicon (Si).\ud These include higher low field mobility, semi-insulating substrates,\ud a direct band-gap, and greater radiation hardness. All these\ud advantages offer distinct opportunities for implementation of new\ud circuit functions or extension of the operating conditions of similar\ud circuits in silicon based technology. However, full exploitation of\ud these advantages has not been realized. This study examines the\ud limitations imposed on conventional GaAs metal-semiconductor field\ud effect transistor (MESFET) technology by deviations of the semi-insulating\ud substrate material from ideal behavior. The interaction\ud of the active device with defects in the semi-insulating GaAs\ud substrate is examined and the resulting deviations in MESFET\ud performance from ideal behavior are analyzed.\ud A p-well MESFET technology is successfully implemented which\ud acts to shield the active device from defects in the substrate.\ud Improvements in the operating characteristics include elimination of\ud drain current transients with long time constants, elimination of the\ud frequency dependence of g[subscript ds] at low frequencies, and the elimination of\ud sidegating. These results demonstrate that control of the channel to\ud substrate junction results in a dramatic improvement in the\ud functionality of the GaAs MESFET. The p-well MESFET RF\ud characteristics are examined for different p-well doping levels.\ud Performance comparable with the conventional GaAs MESFET technology\ud is demonstrated. Results indicate that optimization of the p-well\ud MESFET doping levels will result in devices with uniform\ud characteristics from DC to the highest operating frequency

Year: 1990
OAI identifier: oai:ir.library.oregonstate.edu:1957/36995
Provided by: ScholarsArchive@OSU

Suggested articles

Preview

Citations

  1. (1988). A GaAs MESFET voltage reference,"
  2. (1988). A low frequency GaAs MESFET circuit model,"
  3. (1980). A MESFET model for use in the design of GaAs integrated circuits,"
  4. (1989). A novel GaAs MESFET for suppression of low temperature sidegating,"
  5. (1989). A one transistor GaAs voltage reference circuit,"
  6. (1990). A p-well GaAs MESFET technology for mixed-mode applications,"
  7. (1990). A p-well GaAs MESFET technology for precision integrated circuits,"
  8. (1990). A P-well GaAs MESFET technology,"
  9. A p-well MESFET Technology for multifunction MMIC's," Submitted to the IEEE Trans. Electron Devices.
  10. (1987). An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications,"
  11. (1989). An ultrahigh-speed GaAs MESFET operational amplifier,"
  12. (1986). Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterization,"
  13. (1988). Analytical model of GaAs MESFET output conductance,"
  14. (1988). Annealing and thermal cycling effects in semiinsulator GaAs,"
  15. (1982). Backgating in GaAs MESFET's,"
  16. (1987). Buried channel GaAs MESFETs with frequency independent output conductance,"
  17. (1987). Buried channel GaAs MESFETs with immunity to ionizing optical radiation effects,"
  18. (1987). Buried channel GaAs MESFETs with improved small-signal characteristics,"
  19. (1982). Carrier injection and backgating effect in GaAs MESFET's,"
  20. (1989). Characterization of high-speed (above 500 MHz) devices using advanced ATE techniques, results, and device problems,"
  21. (1988). Characterization of residual carbon in semi-insulating GaAs,"
  22. (1989). Compensation assessment in 'undoped' high-resistivity GaAs,"
  23. (1982). Compensation mechanism in liquid encapsulated Czochralski GaAs: importance of melt stoichiometry,"
  24. (1980). Compensation mechanisms in GaAs,"
  25. (1990). Determination of and significance of frequency dependent output conductance in ion-implanted microwave MESFETs on SI GaAs,"
  26. (1986). Drain current transient suppression in buried channel GaAs MESFETs,"
  27. (1990). Frequency-dependent electrical characteristics of GaAs MESFET's,"
  28. (1989). Frequency-dependent transients in GaAs MESFETS: Process, geometery, and material effects,"
  29. (1989). Frequency-dependent transients in GaAs MESFETS: Process, geometry, and material effects,"
  30. (1988). GaAs buried channel MESFET analog integrated circuits,"
  31. (1985). GaAs differential amplifiers,"
  32. (1989). GaAs FETs and HEMTs. Boston: Artech House,
  33. (1987). GaAs MESFET interface Considerations,"
  34. GaAs substrates: Issues for VLSI,"
  35. (1989). Gate and drain transient measurements of conventional and buried-channel MESFETs,"
  36. (1985). Gate bias dependent low frequency oscillations in GaAs MISFETs,"
  37. (1988). Gate slow transients in GaAs MESFETs causes, cures and impact on circuits,"
  38. (1985). Geometrical and light-induced effects on backgating in ion-implanted GaAs MESFET's,"
  39. (1986). Growth of Bulk GaAs," Gallium Arsenide Materials, Devices,
  40. (1987). High speed quarter micron buried channel MESFETs with improved output characteristics for analog applications,"
  41. Influence of substrates on the electrical properties of GaAs FET devices and integrated circuits,"
  42. (1962). Injection currents in insulators,"
  43. (1985). Interfacial effects related to backgating in ion-implanted GaAs MESFET's,"
  44. (1988). Lateral n-p-n bipolar transistors by ion-implantation into semi-insulating GaAs,"
  45. (1979). Long-term drift of GaAs MESFET characteristics and its dependence on substrate with buffer layer,"
  46. (1988). Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies,"
  47. (1984). Lowfrequency noise in GaAs FETs,"
  48. (1985). Modeling frequency dependence of output impedance of a microwave MESFET at low frequencies,"
  49. Modeling of frequency and temperature effects in GaAs MESFETs,"
  50. (1990). Modeling of frequency and temperature effects in GaAs MESFETs."
  51. On the behaviour and origin of the major deep level (EL2) in GaAs,"
  52. (1982). Origin of the 0.82 eV electron trap in GaAs and its annihilation by shallow donors,"
  53. (1988). Output impedance frequency dispersion and low frequency noise in GaAs MESFETs,"
  54. (1988). Parasitic' effects and their impact on gallium arsenide integrated circuits,"
  55. (1982). Proton isolation for GaAs integrated circuits,"
  56. (1988). Reduction of the backgating effect in GaAs MESFET ICs by charge trapping at the backgate electrode,"
  57. (1990). RF Characteristics of p-well GaAs MESFETs,"
  58. (1985). Role of carbon in LEC SI-GaAs,"
  59. (1984). Seperation of generation-recombination noise and 1/f noise components on GaAs FETs,"
  60. (1985). Shielding of backgating effects in GaAs integrated circuits,"
  61. (1983). Sidegating and backgating in GaAs ICs,"
  62. Sidegating in GaAs MESFETS with p-type implants and its elimination using a p-well technology,"
  63. Substrate contribution to drain current transients and frequency-dependent output conductance on GaAs MESFETs,"
  64. (1988). Substrate-impurities effects on GaAs MESFETs,"
  65. (1986). Suppression of deep level trapping related effects in GaAs MESFETs using a buried channel structure,"
  66. (1986). Suppression of deep level trapping related effects in GaAs MESFETs using a buried channel structure," GaAs REL WORKSHOP abstracts,
  67. (1986). Suppression of drain conductance transients, drain current oscillations and low-frequency generation-recombination noise in GaAs FET's using buried channels,"
  68. (1986). Surface influence on the conductance DLTS spectra of GaAs MESFET's,"
  69. (1984). Temperature dependence of FET properties for Cr-doped and LEC semi-insulating GaAs Substrates,"
  70. (1982). The effect of backgating on the design and performance of GaAs digital integrated circuits,"
  71. The impact of p-type implants on the drain current transients and output conductance in GaAs MESFETs,"
  72. (1990). The potential of p-well GaAs MESFET technology for precision integrated circuits,"
  73. (1988). The role of carbon in the compensation of semi-insulating LEC GaAs,"
  74. (1985). The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits,"
  75. Transients in GaAs MESFETS: Process, geometry, and material effects,"
  76. Trap effects on p-channel GaAs MESFETs: A temperature dependent drain current transient study," Submitted to the IEEE Trans. Electron Devices.
  77. (1985). Use of a surrounding p-type ring to decrease backgate biasing in GaAs MESFET's,"
  78. (1986). Use of detailed balance with known attributes of GaAs midgap levels, in deriving new insights into their energies and properties,"

To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.