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Characterization and comparison of 830 nm laser diodes fabricated in MOCVD and MBE grown heterostructures

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Graduation date: 199

Year: 1997
OAI identifier: oai:ir.library.oregonstate.edu:1957/34521
Provided by: ScholarsArchive@OSU

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  1. (1987). 1.5gm GaInAsP traveling wave semiconductor laser amplifier, doi
  2. (1990). A high gain GRIN-SCH optical semiconductor laser amplifier, doi
  3. (1989). Advanced Semiconductor Fundamentals, (Modular Series On Solid State Devices,
  4. (1988). Amplified spontaneous emission and gain charateristics of Fabry perot and traveling wave type semiconductor laser amplifiers, doi
  5. (1985). Analysis of semiconductor laser optical amplfiers, doi
  6. (1986). Fabrication and gain characteristics of a 1.5 InGaAsP traveling-wave amplifier,
  7. (1987). Fabrication and performance of 1.5 p.m InGaAsP traveling-wave laser amplifiers with angled facets, doi
  8. (1983). Fabry-Perot cavity type 1.5 gm InGaAsP BH-laser amplifier with small optical mode confinement, doi
  9. (1995). Fundamentals Of Optoelectronics, doi
  10. (1984). Gallium Arsenide Processing Techniques, (Artech House,
  11. (1994). Grating-tuned external cavity diode lasers, Master's thesis,
  12. (1994). HEMT compatible laser diodes, Master's thesis,
  13. (1978). Heterostructure Lasers part-A: Fundamental Principles, doi
  14. (1987). John Ebner, Growth, Fabrication and Modeling of pseudomorphic Laser Diodes, Doctoral dissertation,
  15. (1990). Low noise characteristics of a GaAs- A1GaAs multiple-quantum-well laser amplifier, doi
  16. (1993). Measurement of band offset of a strained-layer single quantum well by a capacitance-voltage technique, doi
  17. (1993). Modeling broad-area semiconductor optical amplifiers, doi
  18. (1994). Optical Amplifiers and their Applications,
  19. (1993). Practical method for modelling the nonlinear behaviour of a travelling wave amplifier, doi
  20. (1987). Recombination, gain and bandwidth characteristics of 1.3 gm semiconductor laser amplifiers, doi
  21. (1994). Semiconductor Optoelectronic Devices, doi

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