<p>It has recently been shown that SIMOX (separation by implantation of oxygen) technology can be extended to provide both vertical and lateral isolation of device islands by a single implantation stage. This technology (TDI) entails implantation of O<sup>+</sup> ions through a deposited masking layer of SiO<sub>2</sub> in which windows are opened to define the silicon device islands. However, the structures had detrimental characteristics (e.g. nonplanar surfaces and entrapped silicon islands in the synthesized SiO<sub>2</sub>) that detracted from the utility of the technique. A process is reported that produces improved structures, which are suitable for application to circuits.</p
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