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Total dielectric isolation (TDI) of silicon device islands by a single O<sup>+</sup>implantation stage

By A. K. Robinson, K. J. Reeson, P. L. F. Hemment, N. Thomas, J. R. Davis, K. N. Christensen, C. Marsh, G. R. Booker, J. A. Kilner and R. J. Chater


<p>It has recently been shown that SIMOX (separation by implantation of oxygen) technology can be extended to provide both vertical and lateral isolation of device islands by a single implantation stage. This technology (TDI) entails implantation of O<sup>+</sup> ions through a deposited masking layer of SiO<sub>2</sub> in which windows are opened to define the silicon device islands. However, the structures had detrimental characteristics (e.g. nonplanar surfaces and entrapped silicon islands in the synthesized SiO<sub>2</sub>) that detracted from the utility of the technique. A process is reported that produces improved structures, which are suitable for application to circuits.</p

Year: 1988
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