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The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

By S Whelan, MJ Kelly, R Gwilliam, C Jeynes and C Bongiorno
Publisher: AMER INST PHYSICS
Year: 2005
DOI identifier: 10.1063/1.1940142
OAI identifier: oai:epubs.surrey.ac.uk:421

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