<p>GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN0.006P0.994/GaP LED structures are presented. Below similar to 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Gamma band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.</p
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