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Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs

By JS Ng, WM Soong, MJ Steer, M Hopkinson, JPR David, J Chamings, SJ Sweeney and AR Adams

Abstract

<p>We report bulk GaInNAs p-i-n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to similar to 1.3 mu m. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 10(14)-10(15) cm(-3) was obtained in the samples. One of the samples with a 0.5 mu m thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 mu m at reverse bias of 2 V.</p

Publisher: AMER INST PHYSICS
Year: 2007
DOI identifier: 10.1063/1.2709622
OAI identifier: oai:epubs.surrey.ac.uk:57

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