This is an update request for the document Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system
by Aboozar eMosleh, Aboozar eMosleh, Murtadha A. Alher, Murtadha A. Alher, Larry C. Cousar, Larry C. Cousar, Wei eDu, Seyed Amir eGhetmiri, Seyed Amir eGhetmiri, Thach ePham, Joshua M. Grant, Greg eSun, Richard A. Soref, Baohua eLi, Hameed A. Naseem and Shui-Qing eYu
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and appears online at https://doaj.org/toc/2296-8016
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