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This is an update request for the document High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
by T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein and J. M. Cook
Your paper was deposited in Crossref
and appears online at https://pure.tue.nl/ws/files/1401559/1008625842989344.pdf
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